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FPD1500DFN
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
FEATURES (1850MHZ):
* * * * * * 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency
Datasheet v3.0
PACKAGE:
RoHS
FPD1500DFN - RoHS compliant
GENERAL DESCRIPTION:
The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 750 m Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels.
TYPICAL APPLICATIONS:
* * * Drivers or output stages in PCS/Cellular base station transmitter amplifiers High intercept-point LNAs WLL and WLAN systems, and other types of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS:
PARAMETER
Power at 1dB Gain Compression Small-Signal Gain
SYMBOL
P1dB SSG
CONDITIONS
VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS
MIN
26 16.0
TYP
27 18
MAX
UNITS
dBm dB
Power-Added Efficiency
PAE
VDS = 5 V; IDS = 50% IDSS; POUT = P1dB
45
%
Noise Figure Output Third-Order Intercept Point (from 15 to 5 dB below P1dB)
NF IP3
VDS = 5 V; IDS = 50% IDSS VDS = 5V; IDS = 50% IDSS Matched for optimal power Matched for best IP3
1.2
dB
40 42 375 465 750 400 1 0.7 12 12 0.9 16 16 15 1.3 550
dBm
Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage
IDSS IMAX GM IGSO |VP| |VBDGS| |VBDGD|
VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS +1 V VDS = 1.3 V; VGS = 0 V VGS = -5 V VDS = 1.3 V; IDS = 1.5 mA IGS = 1.5 mA IGD = 1.5 mA
mA mA mS A V V V
Note: TAMBIENT = 22; RF specification measured at f = 1850 MHz using CW signal (except as noted)
1
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FPD1500DFN
Datasheet v3.0
ABSOLUTE MAXIMUM RATING :
PARAMETER
Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current 2 RF Input Power Channel Operating Temperature Storage Temperature Total Power Dissipation Gain Compression 3 Simultaneous Combination of Limits 2 or more Max. Limits PIN TCH TSTG PTOT Comp. Under any acceptable bias state Under any acceptable bias state Non-Operating Storage See De-Rating Note below Under any bias conditions 350mW 175C -55C to 150C 2.2W 5dB
1
SYMBOL
VDS VGS IDS IG
TEST CONDITIONS
-3V < VGS < +0V 0V < VDS < +8V For VDS > 2V Forward or reverse current
ABSOLUTE MAXIMUM
8V -3V IDss 15mA
Notes: 1 TAmbient = 22C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device 2 Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3 Users should avoid exceeding 80% of 2 or more Limits simultaneously 4 Total Power Dissipation defined as: PTOT (PDC + PIN) - POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power Total Power Dissipation to be de-rated as follows above 22C: PTOT= 2.2 - (0.0167W/C) x TPACK where TPACK= source tab lead temperature above 22C (coefficient of de-rating formula is the Thermal Conductivity) Example: For a 65C carrier temperature: PTOT = 2.2W - (0.0167 x (65 - 22)) = 1.48W 5 The use of a filled via-hole directly beneath the exposed heatsink tab on the bottom of the package is strongly recommended to provide for adequate thermal management. Ideally the bottom of the circuit board is affixed to a heatsink or thermal radiator
BIASING GUIDELINES:
* Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices. For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point. Note that pHEMTs, since they are "quasi- E/D mode" devices, exhibit Class AB traits when operated at 50% of IDSS. To achieve a larger separation between P1dB and IP3, an operating point in the 25% to 33% of IDSS range is suggested. Such Class AB operation will not degrade the IP3 performance.
* *
2
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Tel: +44 (0) 1325 301111
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FPD1500DFN
Datasheet v3.0
TYPICAL TUNED RF PERFORMANCE:
FPD1500DFN Biased @ VD = 5V ID = 50%IDSS
35
MSG
FPD1500DFN Biased @ VD = 5V, ID = 50%IDSS
1.5
S21
30
1.25 Noise Fugure (dB) 1 0.75 0.5 0.25 0
MSG Mag S21 &
25 20 15 10 5 0 0.4 1.4 2.4 3.4 4.4 5.4 6.4 7.4 Frequency (GHz) 8.4 9.4 10.4 11.4 12
0.5
1
1.5
2
2.5 3 3.5 4 Frequency (GHz)
4.5
5
5.5
6
Biased @ 5V, 50%IDSS Data taken on Eval Board at 1.85GHz 21.0 20.0
SSG (dB)
Biased @ 5V, 33%IDSS Data taken on Eval board @ 1.85GHz
32.0 31.0 30.0 29.0 28.0 27.0 26.0 25.0 24.0 23.0 22.0
1.90
Noise Figure (dB)
1.60 1.30 1.00 0.70 0.40
N.F. (dB)
18.0 17.0 16.0 15.0 SSG (dB) P1dB (dBm)
P1dB (dBm)
19.0
-20
-10
0
10
20
30
40
50
60
70
80
65%
-20
-10
Temperature (C)
Temperature (C)
BIAS RESPONSE:
Gain & P1dB vs Vd Taken @ IDS = 50% IDSS
18.0 17.0 16.0 32.0 30.0 28.0 26.0 24.0 22.0 20.0 18.0
Gain & P1dB vs % IDSS Taken @ VD = 5V
18.0 17.0
P1dB (dBm)
30.0 28.0 26.0
P1dB (dBm)
SSG (dB)
SSG (dB)
16.0 15.0 14.0 13.0 12.0
15.0 14.0 13.0 12.0
24.0
SSG (dB) P1dB (dBm)
16.0 14.0 12.0 10.0
SSG (dB) P1dB (dBm)
22.0 20.0
15%
25%
35%
45%
Vd (V)
%IDSS
3
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
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55%
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
90
0
10
20
30
40
50
60
70
80
90
FPD1500DFN
Datasheet v3.0
TYPICAL OUTPUT PLANE CONTOURS (VDS = 5V, IDS = 50%IDSS):
FPD1500DFN POWER CONTOURS 900MHz
0. 6 0. 4 0. 8 1. 0 2. 0 3. 0 4. 0 5. 0 10. 0 0 0. 2 0. 4 0. 6 0. 8 1. 0 2. 0 3. 4. 5. 0 00 10 .0
Swp Max 114
0. 2
28dBm
27dBm
02
10 0 21dBm
-
26dBm 25dBm 24dBm
04 0. 0. 1. 2.
22dBm 23dBm 30 50 40
Swp Min 1
FPD1500DFN POWER CONTOURS 1850MHz
0. 8 0. 6 0.4 3.0 4.0 5.0 0.2 10.0 1. 0 2. 0
Swp Max 159
0
0. 2
28dBm
0. 4
0. 6
0. 8
1. 0
2. 0
3. 4. 5. 00 0
10 .0
27dBm
-10.0
26dBm
-0.2
21dBm
-5.0 22dBm -4.0
25dBm
23dBm
-3.0 -0.4 2. 0 0. 8 1. 0
0. 6
Swp Min 1
4
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FPD1500DFN
Datasheet v3.0
TYPICAL I-V CHARACTERISTICS:
DC IV Curves FPD750SOT89
DC IV Curves FPD1500DFN
0.30
0.25
Drain-Source Current (A)
0.20
0.15
0.10
VG=-1.50 VG=-1.25V VG=-1.00V VG=-0.75V VG=-0.50V VG=-0.25V VG=0V
0.05
0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Drain-Source Voltage (V)
Note: The recommended method for measuring IDSS, or any particular IDS, is to set the Drain-Source voltage (VDS) at 1.3V. This measurement point avoids the onset of spurious self-oscillation which would normally distort the current measurement (this effect has been filtered from the I-V curves presented above). Setting the VDS > 1.3V will generally cause errors in the current measurements, even in stabilized circuits. Recommendation: Traditionally a device's IDSS rating (IDS at VGS = 0V) was used as a predictor of RF power, and for MESFETs there is a correlation between IDSS and P1dB (power at 1dB gain compression). For pHEMTs it can be shown that there is no meaningful statistical correlation between IDSS and P1dB; specifically a linear regression analysis shows r2 < 0.7, and the regression fails the F-statistic test. IDSS is sometimes useful as a guide to circuit tuning, since the S22 does vary with the quiescent operating point IDS.
5
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
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FPD1500DFN
Datasheet v3.0
NOISE PARAMETERS:
Bias 3V, 50%IDSS Freq (GHz) 0.900 1.800 2.000 2.200 2.400 2.600 2.800 3.000 3.500 4.000 4.500 5.000 5.500 6.000 Mag 0.345 0.384 0.401 0.448 0.463 0.483 0.482 0.503 0.487 0.513 0.506 0.521 0.563 0.570 opt Angle 18.350 86.350 97.050 116.200 129.200 137.900 146.800 149.850 160.750 172.500 177.500 -172.250 -160.450 -153.650 0.029 0.043 0.039 0.032 0.031 0.034 0.022 0.022 0.023 0.020 0.035 0.027 0.031 0.041 Bias 5V, 25%IDSS Freq (GHz) 0.900 1.800 2.000 2.200 2.400 2.600 2.800 3.000 3.500 4.000 4.500 5.000 5.500 6.000 Mag 0.367 0.416 0.445 0.454 0.450 0.502 0.467 0.475 0.478 0.495 0.490 0.497 0.544 0.558 opt Angle 27.250 75.400 80.800 103.150 125.500 129.550 135.950 142.050 151.550 163.200 168.500 179.700 -168.300 -161.200 0.030 0.046 0.042 0.035 0.034 0.028 0.023 0.023 0.024 0.020 0.034 0.024 0.023 0.028
Rn/50
Rn/50
Bias 5V, 50%IDSS Freq (GHz) 0.900 1.800 2.000 2.200 2.400 2.600 2.800 3.000 3.500 4.000 4.500 5.000 5.500 6.000 Mag 0.181 0.283 0.346 0.400 0.426 0.450 0.445 0.485 0.470 0.492 0.500 0.509 0.554 0.568 opt Angle 73.550 91.250 100.550 119.700 131.450 136.800 148.400 156.550 163.800 175.300 -178.800 -169.350 -158.100 -150.900 0.038 0.051 0.047 0.038 0.036 0.039 0.028 0.026 0.029 0.026 0.042 0.036 0.042 0.054
Rn/50
6
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FPD1500DFN
Datasheet v3.0
S-PARAMETERS:
Biased @ 5V, 50%IDSS
FREQ[GHz] 0.500 1.000 1.500 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 6.500 7.000 7.500 8.000 8.500 9.000 9.500 10.000 10.500 11.000 11.500 12.000 S11m 0.841 0.770 0.770 0.760 0.775 0.773 0.768 0.765 0.759 0.753 0.751 0.761 0.766 0.769 0.760 0.756 0.759 0.771 0.768 0.775 0.803 0.800 0.808 0.817 S11a -91.2 -134.6 -157.8 -173.0 176.0 168.8 163.2 158.2 152.8 145.2 138.5 131.1 124.7 118.9 113.7 108.6 103.5 97.8 93.1 87.6 82.4 76.0 69.5 63.9 S21m 19.661 12.134 8.561 6.590 5.303 4.514 3.898 3.471 3.160 2.878 2.625 2.407 2.204 2.018 1.845 1.717 1.643 1.573 1.510 1.453 1.419 1.328 1.275 1.208 S21a 126.2 102.2 87.3 77.3 68.3 61.0 53.4 46.6 39.0 32.1 24.9 17.7 10.3 3.7 -2.6 -7.8 -13.6 -19.1 -25.8 -32.5 -39.8 -47.2 -53.2 -59.7 S12m 0.023 0.031 0.037 0.040 0.045 0.051 0.056 0.064 0.069 0.076 0.084 0.089 0.092 0.097 0.100 0.105 0.113 0.121 0.136 0.145 0.155 0.164 0.170 0.177 S12a 51.0 41.1 38.0 35.6 38.0 35.7 35.0 32.2 32.4 29.2 24.8 20.4 14.8 10.3 6.7 6.2 3.1 -1.7 -5.3 -12.3 -17.9 -22.5 -27.9 -32.2 S22m 0.294 0.308 0.317 0.324 0.339 0.345 0.349 0.355 0.365 0.372 0.377 0.380 0.385 0.388 0.392 0.396 0.408 0.418 0.428 0.451 0.465 0.475 0.489 0.502 S22a -137.3 -159.7 -168.0 -175.2 179.6 173.0 166.4 159.1 154.0 148.1 145.1 140.3 135.0 129.1 123.8 120.8 117.8 114.3 110.0 104.3 97.9 91.1 86.5 79.2
7
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FPD1500DFN
Datasheet v3.0
REFERENCE DESIGN (5.3 - 5.9GHZ)
-Vg
1.0uF
Vd
1.0uF
FPD1500DFN EVAL Board Schematic
15pF 20 Ohm
Z10 Z9 Z15 Z14
15pF
Z16
15pF
1
Z1
2 4 3 1
Z5
2 4 3 1
Z8
2 4 1 3
15pF
Z11 Z12
2 4 3
RF IN (50 Ohm)
Z0
Z2 Z1
Z3
Z4 Z5
Z6
Z7 Z8
Z13 Z17 Z14
Z18
Z19
RF OUT (50 Ohm)
Desc. Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z16 Z11, Z12 Z13 Z14 Z15 Z17 Z18 Z19
Value 0.045" x 0.050" Microstrip 0.020" x 0.500" Microstrip W1=0.020" W2=0.020" W3=0.020" W4=0.020" Microstrip Cross 0.020" x 0.030" Microstrip W1=0.020" W2=0.052" W3=0.020" W4=0.052" Microstrip Cross 0.052" x 0.94" Microstrip 0.020" x 0.285" Microstrip W1=0.020" W2=0.054" W3=0.020" W4=0.054" Microstrip Cross 0.054" x 0.166" Microstrip 0.015" x 0.166" Microstrip 0.310" x 90 Microstrip Radial Stub 0.350" x 90 Microstrip Radial Stub 0.012" x 0.037" Microstrip W1=0.020" W2=0.040" W3=0.020" W4=0.040" Microstrip Cross 0.040" x 0.175" Microstrip 0.015" x 0.157" Microstrip 0.020" x 0.180" Microstrip 0.060" x 0.050" Microstrip 0.042" x 0.220" Microstrip
PARAMETER
Frequency Gain P1dB N.F. OIP3 S11 S22 Vd Vg Id
UNIT
GHz dB dBm dB dBm dB dB V V mA
PERFORMANCE
5.3 to 5.9 10.5 27 1.5 40 -10 -9 5 -0.4 to -0.7 200
8
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FPD1500DFN
Datasheet v3.0
EVALUATION BOARD ( 5.3 - 5.9 GHZ )
PCB FOOTPRINT:
9
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
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FPD1500DFN
Datasheet v3.0
PACKAGE OUTLINE:
(dimensions in millimetres - mm)
PREFERRED ASSEMBLY INSTRUCTIONS:
Available on request
DISCLAIMERS:
This product is not designed for use in any space based or life sustaining/supporting equipment.
HANDLING PRECAUTIONS:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 0 (0250 V) as defined in JEDEC Standard No. 22A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
ORDERING INFORMATION:
PART NUMBER
FPD1500DFN EB1500DFN-BB EB1500DFN-BA EB1500DFN-BC EB1500DFN-BE EB1500DFN-AJ
DESCRIPTION
Packaged pHEMT Packaged pHEMT eval board - 900MHz Packaged pHEMT eval board - 1.85GHz Packaged pHEMT eval board - 2.0GHz Packaged pHEMT eval board - 2.4GHz Packaged pHEMT eval board - 5.3 to 5.9GHz
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters are available on request.
10
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
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